Dataram DDR4 8GB DIMM 288-Pin 2133 MHz CL16 1.2 V Unbuffered

Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2133 MHz, Memory form factor: 288-pin DIMM, CAS latency: 16, ECC, Product colour: Green DVM21E2T8/8G is an Unbuffered 1Gx72 memory module, which conforms to JEDEC's ...Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2133 MHz, Memory form factor: 288-pin DIMM, CAS latency: 16, ECC, Product colour: Green DVM21E2T8/8G is an Unbuffered 1Gx72 memory module, which conforms to JEDEC's DDR4-2133, PC4-2133 standard. The assembly is Dual-Rank. Each rank is comprised of nine 512Mbx8 DDR4- 2133 SDRAMs.

One EEPROM is used for Serial Presence Detect and a combination register/PLL, with Address and Command Parity, is also used. Both output driver strength and input termination impedance are programmable to maintain signal integrity on the I/O signals in a Fly-by topology. A thermal sensor accurately monitors the DIMM module and can prevent exceeding the maximum operating temperature of 95C.

- 288-pin JEDEC-compliant DIMM, 133.35 mm wide by 31.25 mm high - Operating Voltage: VDD/VDDQ = 1.2V (1.14V to 1.26V) - VPP = 2.5V (2.375V to 2.75V) - VDDSPD = 2.25V to 2.75V - I/O Type: 1.2 V signaling - On-board I2C temperature sensor with integrated Serial Presence-Detect (SPD) EEPROM - Data Transfer Rate: 17.0 Gigabytes/sec - Data Bursts: 8 and burst chop 4 mode - ZQ Calibration for Output Driver and On-Die Termination (ODT) - Programmable ODT / Dynamic ODT during Writes - Programmable CAS Latency: 9, 10, 11, 12, 13, 14, 15 and 16 - Bi-directional Differential Data Strobe signals - Per DRAM Addressability is supported - Write CRC is supported at all speed grades - DBI (Data Bus Inversion) is supported(x8 only) - CA parity (Command/Address Parity) mode is supported - Supports ECC error correction and detection - 16 internal banks - SDRAM Addressing (Row/Col/BG/BA): 15/10/2/2 - Fully RoHS Compliant.