onsemi NTH4LN095N65S3H MOSFET

The manufacturer part number is NTH4LN095N65S3H. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration.

The product carries enhancement channel mode. The product nth4ln095n, is a highly preferred choice for users. The product is ...The manufacturer part number is NTH4LN095N65S3H.

It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode.

The product nth4ln095n, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage.

It provides up to 0.095 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip.

While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins.

It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 2.8ma. The product has -55°c ~ 150°c (tj) operating temperature range.

Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 95mohm @ 15a, 10v. The maximum gate charge and given voltages include 58 nc @ 10 v.

The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel.

The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v.

Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 208w (tc). The products input capacitance at maximum includes 2833 pf @ 400 v.

The product superfet iii, is a highly preferred choice for users. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 30a (tc).

This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.